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RDK-611 - 10 W Dual Output Power Supply Using InnoSwitch3-EP (725 V Si Switch)

10 W Dual Output Power Supply Using InnoSwitch3-EP (INN3672C-H602)

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Specifications

Associated Product Numbers INN3672C-H602
Design Type Reference Design Reports (RDR)
Topology Flyback
Vout 1 5.00 V
Vout 2 12.00 V
Vin (min) 90
Vin (max) 265
P (NoLoad) 24.00 mW
CV/CC CV/CC
Efficiency 85.00%
Isolated? Yes
Number of outputs 2
Output Power 10.00 W
OVP? Yes
PFC? No
Associated Parts INN3672C-H602
Gerber File rd611gerber.zip
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General Purpose

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Videos

White Paper - Evaluating the Safety Isolation of the Package in an Integrated Power Device
PI Webinar – 1250 V PowiGaN Switcher ICs Extend GaN Application
PowiGaN in a Solar Race Car - Team αCentauri Completes World Solar Challenge
Who Needs 900 V GaN?
InnoSwitch3-EP ICs with 900 V PowiGaN Switch Support Industrial Applications Up to 100 W
GaN, SiC or Traditional Silicon? Be Technology Agnostic to Get the Best for Your Application - Bodo's Wide Bandgap Event 2022
Triumphing over the Challenges of Increased Power Delivery - PowerUP Expo 2022
GaN Explained - Part 1 - What is GaN?
PI Webinar On-Demand - EU Energy Label Reform
PI Webinar On-Demand - PowiGaN Technology
PI Webinar On-Demand - Industry Tech Days Pt 1: GaN Switches Are Changing the Rules for Offline Power
New Features in InnoSwitch3
Introduction to InnoSwitch3
InnoSwitch3 - Synchronous Rectification
InnoSwitch3 Cross Regulation

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